Semiconductor devices and methods of fabricating the same

摘要

A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a substrate; a plurality of gate structures disposed on a top surface of the substrate, and including a first gate structure, a second gate structure and a third gate structure; an isolation layer disposed in the substrate; a first epitaxial layer disposed in the substrate, and disposed between the first gate structure and the second gate structure; a second epitaxial layer disposed in the substrate, and disposed between the second gate structure and the third gate structure; and a third epitaxial layer disposed in the substrate, and disposed between the third gate structure and the isolation layer, wherein each of the first epitaxial layer and the second epitaxial layer includes a v-shaped lower portion, wherein the third epitaxial layer includes an upper surface that is inclined with respect to the top surface of the substrate, wherein the upper surface of the third epitaxial layer is substantially flat, and wherein the upper surface of the third epitaxial layer contacts the third gate structure and the isolation layer.