SEMICONDUCTOR NANOWIRE MANUFACTURING METHOD AND SEMICONDUCTOR NANOWIRE ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a group III-V compound semiconductor nanowire standing erect on a group IV semiconductor substrate by a technique which requires no difficult analysis and fits for a manufacturing process of a compound semiconductor in the past in a semiconductor nanowire manufacturing method and a semiconductor nanowire element manufacturing method.SOLUTION: A semiconductor nanowire manufacturing method comprises the steps of: forming minute crystals containing a group III-V compound semiconductor on a group IV semiconductor substrate having a (111) plane exposed on an opening as a principal surface; forming group III metal droplets on the micro crystals; and subsequently growing a group III-V compound semiconductor nanowire.