Miscut bulk substrates

摘要

A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

主权项

1. A device comprising;
a bulk (Al,Ga,In)N substrate; a plurality of epitaxial layers overlying the bulk (Al,Ga,In)N substrate and defining a light-emitting device structure, wherein a top surface of the device structure is characterized by a nominal c-plane crystallographic orientation miscut by an angle from 0.35 degrees to 1 degrees toward an m-direction; and wherein the epitaxial layers of the light-emitting device structure are configured to have a standard deviation of photoluminescent wavelength uniformity of less than 1% over at least a 2,500 μm2 area.