Programmable gate III-nitride power transistor

摘要

A III-nitride semiconductor device which includes a charged floating gate electrode.

主权项

1. A programmable III-Nitride power transistor comprising:
a first III-nitride semiconductor body; a second III-nitride semiconductor body situated over said first III-nitride semiconductor body to form a two dimensional electron gas; a passivation layer situated over said second III-nitride semiconductor body; a gate arrangement disposed over said second III-nitride semiconductor body, said gate arrangement including a non-volatile floating gate situated in a trench within said passivation layer, and a gate electrode situated over said non-volatile floating gate and electrically insulated from said non-volatile floating gate by an insulation spacer in said trench, said non-volatile floating gate configured for programming said III-Nitride power transistor by a current produced in said two dimensional electron gas.