| 发明名称 | Ion sources, systems and methods | ||
| 摘要 | Ion sources, systems and methods are disclosed. | ||
| 申请公布号 | US9236225(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201514684607 | 申请日期 | 2015.04.13 |
| 申请人 | Carl Zeiss Microscopy, LLC | 发明人 | Ward Billy W.;Notte, IV John A.;Farkas, III Louis S.;Percival Randall G.;Hill Raymond;Edinger Klaus;Markwort Lars;Aderhold Dirk;Mantz Ulrich |
| 分类号 | H01J37/317;H01J37/256;H01J37/28;B82Y10/00;B82Y40/00;H01J27/26;H01J37/08;H01J37/20;H01J37/252;H01J37/305;H01J37/304 | 主分类号 | H01J37/317 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A method, comprising: generating an ion beam by interacting a gas with a gas field ion source; using the ion beam to determine information about a lithography mask, the ion beam having a spot size of 10 nm or less at a surface of the semiconductor article; and repairing the lithography mask based on the information. | ||
| 地址 | Thornwood NY US | ||