CVD conformal vacuum/pumping guiding design

摘要

The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.

主权项

1. A semiconductor process system comprising:
a guiding element structure arranged within a chamber; one or more inlets formed on a first side of the guiding element structure, the one or more inlets having inlet sizes selected according to a removal rate and to mitigate gas flow variations; an outlet formed on a second side of the guiding element structure and having an outlet size selected according to the removal rate, the second side being on a bottom of the guiding element structure; a transportation region within the guiding element structure and coupled to the one or more inlets and the outlet; a seal encircling the outlet, and configured to seal an interface between the outlet and an exit port of the chamber; and a wafer support arranged in the chamber and directly above the guiding element structure; wherein the guiding element structure is configured to pass all gas flowing into the transportation region from the one or more inlets to the exit port through the outlet.