High voltage laterally diffused metal oxide semiconductor

摘要

A high-voltage LDMOS device with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming a continuous gate structure over a deep well region and a body of a substrate. The method further includes forming oppositely doped, alternating segments in the continuous gate structure. The method further includes forming a contact in electrical connection with a tip of the continuous gate structure and a drain region formed in the substrate. The method further includes forming metal regions in direct electrical contact with segments of at least one species of the oppositely doped, alternating segments.

主权项

1. A method, comprising:
forming a continuous gate structure over a deep well region and a body of a substrate; forming oppositely doped, alternating segments in the continuous gate structure the alternating segments including first segments having a first conductivity type and second segments having a second conductivity type, the second segments respectively being located between adjacent first segments; forming metal islands respectively in contact with the first segments, with the second segments being devoid of the metal islands, such that each of the first segments has a metal island formed thereon; and forming a contact in direct electrical connection with one of the metal islands formed over one of the first segments located at a tip of the continuous gate structure and with a drain region formed in the substrate to form a direct electrical connection between the drain region and the one of the metal islands formed over the one of the first segments located at the tip of the continuous gate structure.