| 摘要 |
Provided is a magnetic junction to be used in a magnetic device. The magnetic junction comprises: a reference layer; a non-magnetic spacer layer; a free layer which is converted between multiple stable magnetic states when a write electric current passes the magnetic junction, and has the non-magnetic spacer layer arranged between the free layer and the reference layer; and a first rare earth-transition metal (RE-TM) layer on at least one from the reference layer and the free layer. If the first RE-TM layer is on the free layer, the free layer includes a ferromagnetic layer, a soft magnetic layer and the first RE-TM layer between the ferromagnetic layer and the soft magnetic layer, and the first RE-TM layer has a standby magnetic moment in the range of a standby temperature and a write magnetic moment greater than the standby magnetic moment in the range of a writing temperature. If the first RE-TM layer is on the reference layer, the magnetic junction includes a second RE-TM layer, the first RE-TM layer has a first saturation magnetization quantity, the second RE-TM layer has a second saturation magnetization quantity, and the first saturation magnetization quantity matches the second saturation magnetization quantity at least in an operating temperature range. |
