Transistor having replacement gate and epitaxially grown replacement channel region

摘要

The disclosure provides a method of forming a transistor. In this method, a dummy gate structure is formed over a semiconductor substrate. Source/drain regions are then formed in the semiconductor substrate such that a channel region, which is arranged under the dummy gate structure in the semiconductor substrate, separates the source/drains from one another. After the source/drain regions have been formed, the dummy gate structure is removed. After the dummy gate structure has been removed, a surface region of the channel region is removed to form a channel region recess. A replacement channel region is then epitaxially grown in the channel region recess.

主权项

1. A method, comprising:
providing a dummy gate structure over a semiconductor substrate; forming source/drain regions in the semiconductor substrate such that a channel region, which is arranged under the dummy gate structure in the semiconductor substrate, separates the source/drains from one another; after the source/drain regions have been formed, removing the dummy gate structure; after the dummy gate structure has been removed, removing a surface region of the channel region to form a channel region recess; and epitaxially growing a replacement channel region in the channel region recess.