Thin beam deposited fuse

摘要

A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last metal interconnect structures.

主权项

1. A semiconductor device, comprising:
a substrate having first and second circuits formed therein; an interconnect stack formed on the substrate to define a planar interconnect stack surface having first and second exposed interconnects physically separated from one another by an interlayer dielectric layer in the multi-layer interconnect stack; and a focused ion beam deposited fuse layer, which may be selectively programmed, formed overlying the interlayer dielectric layer and in physical or electrical contact with the first and second exposed interconnects.