| 发明名称 | Cut-mask patterning process for fin-like field effect transistor (FinFET) device | ||
| 摘要 | A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer. | ||
| 申请公布号 | US9236267(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201213369818 | 申请日期 | 2012.02.09 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | De Ho Wei;Lu Kuei-Liang;Shieh Ming-Feng;Chang Ching-Yu |
| 分类号 | H01L21/308;H01L21/84;H01L27/12 | 主分类号 | H01L21/308 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for patterning a plurality of features in a non-rectangular pattern, the method comprising: providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction; forming a first layer above the surface and above the plurality of elongated protrusions; patterning the first layer with an end cutting mask, the end cutting mask including two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly-adjacent patterns and a portion corresponding to the sub-resolution feature there between; and cutting ends of the elongated protrusions using the pattern on the first layer. | ||
| 地址 | Hsin-Chu TW | ||