| 发明名称 | Read measurement of resistive memory cells | ||
| 摘要 | A method for read measurement of resistive memory cells having s≧2 programmable cell-states includes applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the initial voltage; determining a read voltage for the cell in dependence on the measurement; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement; wherein the read voltages for cells are determined in such a manner that the cell-state metric exhibits a desired property. | ||
| 申请公布号 | US9236120(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201313899092 | 申请日期 | 2013.05.21 |
| 申请人 | International Business Machines Corporation | 发明人 | Papandreou Nikolaos;Pozidis Charalampos;Sebastian Abu |
| 分类号 | G11C13/00;G11C11/56 | 主分类号 | G11C13/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A method for read measurement of resistive memory cells having s≧2 programmable cell-states, the method comprising: applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the respective at least one initial voltage; calculating a value of a read voltage for the cell using a sum of a value of one of the at least one initial voltage and a value of a function based on the measurement associated with each at least one initial voltage; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement. | ||
| 地址 | Armonk NY US | ||