Magnetic memory devices and methods of writing data to the same

摘要

Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

主权项

1. A magnetic memory device, comprising:
a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction; a bit line on the magnetoresistive cell, the bit line including a spin Hall effect material layer exhibiting a spin Hall effect and an electrode material layer on the spin Hall effect material layer, the spin Hall effect material layer contacting the free layer, the bit line configured to allow a first current to flow therein; a lower electrode below the magnetoresistive cell, the lower electrode is configured to allow a second current to pass through the magnetoresistive cell based on a voltage applied between the bit line and the lower electrode; and a switching device configured to turn on and turn off a flow of the second current passing through the magnetoresistive cell such that a direction of the first current and a direction of the second current remain a same unipolar direction when changing the variable magnetization direction of the free layer.