| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of suppressing generation of stray light caused by light made incident into a photoelectric conversion part from an oblique direction.SOLUTION: A semiconductor device 100 comprises a semiconductor substrate 4, a photoelectric conversion part 1, and a transfer electrode 2. The photoelectric conversion part 1 is formed in the semiconductor substrate 4. The transfer electrode 2 is placed on a principle surface 4a of the semiconductor substrate 4 adjacently to the photoelectric conversion part 1. An anti-reflection film 3 is formed on at least a part on an electrode side wall surface at the photoelectric conversion part 1 side, of the transfer electrode 2. With respect to the anti-reflection film 3, at a side apart from the principle surface 4a rather than a side closer to the principle surface 4a, a distance from a center C of the transfer electrode 2 in a direction along the principle surface 4a to an anti-reflection film side wall surface 3bb of the anti-reflection film 3 is larger. |
