发明名称 |
Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology |
摘要 |
An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor. |
申请公布号 |
US9234859(B2) |
申请公布日期 |
2016.01.12 |
申请号 |
US201414226554 |
申请日期 |
2014.03.26 |
申请人 |
STMicroelectronics S.r.l.;STMicroelectronics (Crolles 2) SAS |
发明人 |
Vaiana Michele;Casella Daniele;Bruno Giuseppe;Cariola Rosario;Gautheron Benoit |
分类号 |
H01L29/02;G01N27/12;G01N27/22;H01L49/02 |
主分类号 |
H01L29/02 |
代理机构 |
Seed IP Law Group PLLC |
代理人 |
Seed IP Law Group PLLC |
主权项 |
1. A humidity sensor, comprising:
a semiconductor chip; a sensing capacitor and a reference capacitor integrated in the semiconductor chip, each of the sensing and reference capacitors having a first electrode and a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at a distance from each other and mutually insulated; a hygroscopic layer over the sensing and reference capacitors; and a conductive shielding region over the reference capacitor and between the hygroscopic layer and the reference capacitor and not over the sensing capacitor. |
地址 |
Agrate Brianza IT |