Photoelectric conversion element and method for manufacturing same

摘要

The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

主权项

1. A photoelectric conversion element, comprising:
a semiconductor substrate of a first conductivity type; a first amorphous film of the first conductivity type disposed on an entire surface of one surface of the semiconductor substrate; a first conductive oxide layer disposed on the first amorphous film; a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate; a second conductive oxide layer disposed on the second amorphous film; a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate; and a third conductive oxide layer disposed on the third amorphous film,
wherein electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second conductive oxide layer and the third conductive oxide layer,wherein transmittance of the first conductive oxide layer is higher than transmittances of the second conductive oxide layer and the third conductive oxide layer,wherein the first conductive oxide layer, the second conductive oxide layer, and the third conductive oxide layer are oxides configured of a common element, andwherein oxygen contents of the second conductive oxide layer and the third conductive oxide layer are lower than an oxygen content of the first conductive oxide layer.