发明名称 Substrate film and method of manufacturing the same
摘要 Provided are a substrate film and a method of manufacturing the substrate film. The substrate film may have excellent thermal resistance and dimensional stability, has excellent stress relaxation to prevent damage of a wafer caused by remaining stress, inhibits damage to or flying-off of the wafer caused by application of a non-uniform pressure during the processing of the wafer, and has excellent cuttability. Accordingly, the substrate film of the present invention can be effectively used as a processing sheet in a process of processing various kinds of wafers including dicing, back-grinding or picking-up.
申请公布号 US9236303(B2) 申请公布日期 2016.01.12
申请号 US201313967060 申请日期 2013.08.14
申请人 LG Chem, Ltd. 发明人 Joo Hyo Sook;Kim Se-Ra;Shim Jung Sup;Chang Suk Ky
分类号 H01L21/00;H01L21/78;C08F8/10;C09J133/06;C08F20/18;H01L21/683;C09J7/02;B29C39/00;C08G18/62;C08G18/81;C09J175/16 主分类号 H01L21/00
代理机构 Rothwell, Figg, Ernst & Manbeck, P.C. 代理人 Rothwell, Figg, Ernst & Manbeck, P.C.
主权项 1. A substrate film, which has a toughness of 10 Kg·mm to 250 Kg·mm at 23° C. comprising a cured product of a solventless composition, wherein the solventless composition comprises: a (meth)acrylic polymer component comprising a (meth)acrylic acid ester-based monomer as a polymerization unit, and having a photoreactive group on a side chain or terminal end thereof; and a component of a monomer having a high glass transition temperature, wherein the cured product has a glass transition temperature of −20° C. (250K) or more, and wherein the substrate film has a modulus of 10 MPa to 200 MPa.
地址 Seoul KR