Epitaxial growth apparatus and epitaxial growth method

摘要

A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.

主权项

1. A susceptor support shaft, supporting a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus for forming an epitaxial film on a surface of a semiconductor wafer placed on the susceptor, the susceptor support shaft comprising:
a support column located substantially coaxial with a center of the susceptor; a plurality of arms extended radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other, the arm connecting member being a ring member concentric with the susceptor and outside of the central region of the susceptor which has a radius of 80% or more of the susceptor radius; and n support pins, where n is a natural number of four or more, provided on the arm connecting member, thereby directly supporting the susceptor by each tip of the support pins, wherein the arm connecting member is separated from the susceptor, and wherein the number of the arms is n−1 or less.