| 摘要 |
PROBLEM TO BE SOLVED: To suppress a heavy current when powering on for PUF-ID generation using a memory cell such as an SRAM, and to stabilize a generated ID.SOLUTION: In accordance with an ID generation method of an ID generation device, the ID generation device comprises at least one 1/0 generation circuit including: a variation generation circuit to which one terminal of a pair of resistance elements is connected and in which a switch with the conduction controlled in accordance with an input signal from a switch control terminal, is connected between the one terminal and one polarity of a power source; and a latch circuit which is connected between the other terminal of the pair of resistance elements and a polarity that is different from the one polarity of the power source, and outputs 1 or 0. The ID generation method includes: a variation generation step of generating a variation by conducting the switch of the variation generation circuit; and a latch step of making the latch circuit output 1 or 0 by inputting the variation generated in the variation generation step. |
