SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which support reduction in channel resistance and reduction in JFET resistance at the same time.SOLUTION: A silicon carbide semiconductor device of the present invention comprises: a first conductivity type silicon carbide substrate; a first conductivity type drift layer on a principal surface of the silicon carbide substrate; and second conductivity type well regions which are provided at a distance from each other in a surface layer of the drift layer. The well region has a retrograde profile where a second conductivity type impurity concentration decreases in a range of up to 400 nm in a depth direction, from 1×10cmto a concentration equivalent with a first conductivity type impurity concentration in the drift layer.