发明名称 |
Schottky barrier diode and method for manufacturing schottky barrier diode |
摘要 |
A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n− type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n− type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. |
申请公布号 |
US9236500(B2) |
申请公布日期 |
2016.01.12 |
申请号 |
US201314143735 |
申请日期 |
2013.12.30 |
申请人 |
Hyundai Motor Company |
发明人 |
Lee Jong Seok;Hong Kyoung-Kook;Chun Dae Hwan;Jung Youngkyun |
分类号 |
H01L29/06;H01L29/872;H01L29/66;H01L29/16 |
主分类号 |
H01L29/06 |
代理机构 |
Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. |
代理人 |
Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F. |
主权项 |
1. A Schottky barrier diode, comprising:
an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface; a p region disposed on the inclined surface of the n− type epitaxial layer; a Schottky electrode disposed on the upper surface of the n− type epitaxial layer and the p region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the n− type epitaxial layer exposes a portion of the first surface of the n+ type silicon carbide substrate, and the p region extends along the first surface of the exposed n+ type silicon carbide substrate. |
地址 |
Seoul KR |