FinFET device containing a composite spacer structure

摘要

A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.

主权项

1. A method of forming a FinFET device comprising:
providing a plurality of semiconductor fins on a surface of a substrate; forming at least one gate structure orientated perpendicular to and straddling each semiconductor fin of the plurality of semiconductor fins; providing a composite spacer structure on vertical sidewalls of each gate structure, wherein said composite spacer structure comprises an inner low-k dielectric material portion and an outer nitride material portion and wherein said providing said composite spacer structure comprises forming a dielectric spacer comprising a low-k dielectric material and converting an outer surface of the dielectric spacer into said outer nitride material portion, or depositing a graded spacer profile; and epitaxially growing a source-side doped semiconductor material portion on an exposed surface of each semiconductor fin and on one side of each gate structure and a drain-side doped semiconductor portion on another exposed surface of each semiconductor fin and on another side of each gate structure.