Method for manufacturing light-emitting devices with improved active-region

摘要

A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.

主权项

1. A method for manufacturing a light-emitting device comprising:
providing an n-type layer deposited over a substrate; patterning the n-type layer to form a plurality of recesses defining a first group of surfaces and a second group of surfaces vertically displaced from the first group of surfaces; depositing an active-region over and conformable to the first group of surfaces and the second group of surfaces of the n-type layer, so that a first portion of the active-region is formed on the first group of surfaces and a second portion of the active-region is formed on the second group of surfaces, wherein the first portion of the active-region is vertically displaced from the second portion of the active-region; and depositing a p-type layer over and conformable to the active-region.