发明名称 Light emitting device
摘要 A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is electrically coupled to the first conductive semiconductor layer. A current blocking layer is provided adjacent to the light emitting structure, and includes a top surface disposed in the first conductive semiconductor layer by passing through the active layer. A first metal layer is provided over the current blocking layer and contacts the first conductive semiconductor layer, and a reflective electrode is electrically coupled to the second conductive semiconductor layer.
申请公布号 US9236544(B2) 申请公布日期 2016.01.12
申请号 US201313960280 申请日期 2013.08.06
申请人 LG Innotek Co., Ltd. 发明人 Jeong Hwan Hee
分类号 H01L33/60;H01L33/14;H01L33/38;H01L33/40 主分类号 H01L33/60
代理机构 KED & Associates LLP 代理人 KED & Associates LLP
主权项 1. A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer, and a second conductive semiconductor layer adjacent to the active layer; a first electrode electrically coupled to the first conductive semiconductor layer; a current blocking layer provided adjacent to the light emitting structure and having a top surface disposed in the first conductive semiconductor layer by passing through the active layer; a first metal layer provided over the current blocking layer and contacting the first conductive semiconductor layer; a reflective electrode electrically coupled to the second conductive semiconductor layer; a channel layer disposed around a lower portion of the light emitting structure; and a second metal layer disposed on the channel layer and contacting the first conductive semiconductor layer, wherein both the first metal layer and the second metal layer are not physically and directly connected to the first electrode.
地址 Seoul KR