| 主权项 |
1. A thin film transistor provided on an insulating substrate, comprising:
a gate electrode provided on the insulating substrate; a gate insulating film that covers the gate electrode; a source electrode and a drain electrode provided on the gate insulating film with a predetermined distance, to sandwich the gate electrode; and a channel layer made of an oxide semiconductor layer which is located in a region sandwiched between the source electrode and the drain electrode and of which one end and the other end are respectively electrically connected to the source electrode and the drain electrode, wherein the channel layer includes two first regions each of which is positioned to respectively surround the source electrode and the drain electrode and has a first resistance value, and a second region sandwiched between the two first regions, extending to define entire end portions of the channel layer in a channel width direction, and having a second resistance value higher than the first resistance value, and the first regions are not provided in the end portions of the channel layer in the channel width direction. |
