Thin film transistor and method for producing same

摘要

A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

主权项

1. A thin film transistor, comprising:
a silicon substrate having a main surface formed with a stripe-like or grid-like concave-convex configuration; a channel layer formed of a plurality of carbon nanowall thin films which are disposed on a plurality of protruding portions along a length direction of the protruding portion of the concave-convex shape, and respectively grows in a normal direction of the silicon substrate; a source electrode at least contacting a first side surface of each of the plurality of carbon nanowall thin films which is in parallel to a thickness direction of the carbon nanowall thin film; a drain electrode disposed so as to be opposed to the source electrode in an in-plane direction of the carbon nanowall thin film, and at least contacting a second side surface of each of the plurality of carbon nanowall thin films which is opposite to the first side surface; a gate electrode; and an insulating film disposed between the plurality of carbon nanowall thin films and the gate electrode.