High electron mobility transistors having improved reliability

摘要

High electron mobility transistors (HEMTs) having improved I-V characteristics and reliability are provided. According to one embodiment, a selective implantation is performed to form a damage region in a gate-to-drain region of, for example, an IηAΓN/GaN HEMT. The selective implantation can be performed by irradiating some or all of a gate-to-drain region of an InAlN/GaN HEMT on a substrate with protons or other ions such as Ge ions, He ions, N ions, or O ions. The damage region can extend in a region below a 2DEG interface of the HEMT.

主权项

1. A high electron mobility transistor (HEMT), comprising:
a heterostructure for an HEMT on a substrate; a gate electrode on a gate region of the heterostructure; a source contact on a source region of the heterostructure; a drain contact on a drain region of the heterostructure; and a damage region extending laterally between a portion or all of an area from the gate region to the drain region of the heterostructure, the damage region extending vertically to the substrate, wherein the heterostructure for the HEMT comprises an InAlN/GaN heterostructure, wherein the damage region comprises protons selectively irradiated into it from the gate region to the drain region of the heterostructure to a depth below a 2DEG channel of the heterostructure, wherein the protons are selectively irradiated by selective proton irradiation performed either: a) at an energy in a range of 5 MeV to 15 MeV and a dose in a range of 1×1011 cm−2 to 5×1015 cm−2; or b) at an energy in a range of 300 keV to 400 keV and a dose in a range of 109 cm−2 to 5×1015 cm−2, and wherein the damage region comprises Ge ions selectively implanted into the portion or all of the area from the gate region to the drain region of the heterostructure.