Semiconductor device and method for forming the same

摘要

A semiconductor device includes a junction region on both sides of a trench in a semiconductor substrate, a first gate electrode with a first workfunction buried in the trench, and a second gate electrode formed of a polycide layer having a second workfunction overlapping with the junction region at an upper part of the first gate electrode.

主权项

1. A semiconductor device comprising:
a trench in a semiconductor substrate; a junction region disposed on two sides of the trench; a first gate electrode buried in the trench in such a manner that the first gate electrode has a step difference at a top surface thereof and has a first workfunction; and a second gate electrode disposed over the first gate electrode, the second gate electrode including a polycide material and having a second workfunction, wherein the second gate electrode overlaps with the junction region, and wherein the second gate electrode surrounds an upper portion of the first gate electrode.