Semiconductor device and method for producing the same

摘要

A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate side, floating gates respectively disposed in two symmetrical directions so as to sandwich the pillar-shaped silicon layer, and a control gate line disposed in two symmetrical directions other than the two directions so as to sandwich the pillar-shaped silicon layer. A tunnel insulating film is formed between the pillar-shaped silicon layer and each of the floating gates. The control gate line is disposed so as to surround the floating gates and the pillar-shaped silicon layer with an inter-polysilicon insulating film interposed therebetween.

主权项

1. A semiconductor device, comprising:
a pillar-shaped semiconductor layer; two floating gates arranged so as to sandwich a channel region of said semiconductor layer; and a control gate line disposed so as to surround said two floating gates and said channel region; and wherein said two floating gates are arranged in a direction in which said control gate line extends so as to sandwich said channel region.