Gas barrier film and method for producing gas barrier film

摘要

Disclosed are a gas barrier film obtained by forming a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen measured by an XPS analysis, the gas barrier layer includes a first region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region constituted in the order of the amount of silicon>the amount of oxygen>the amount of nitrogen; and a third region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen, from a surface side toward a base material side.

主权项

1. A gas barrier film, comprising a gas barrier layer formed on a base material,
wherein the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with an amount of nitrogen, an amount of silicon and an amount of oxygen in the gas barrier layer measured by an XPS analysis, when a surface of the gas barrier layer that is in contact with the base material is designated as a base material side, and the opposite surface is designated as a surface side, the gas barrier layer includes: a first region in the relationship of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region in the relationship of the amount of silicon>the amount of oxygen>the amount of nitrogen; a third region in the relationship of the amount of oxygen>the amount of silicon>the amount of nitrogen, from the surface side toward the base material side, wherein in the second region, the amount of nitrogen measured by an XPS analysis relative to the total amount, taken as 100 mol %, of the amount of nitrogen, the amount of silicon and the amount of oxygen, has a value in the range of 0.3 mol % to 30 mol %; the amount of silicon has a value in the range of 25 mol % to 50 mol %; and the amount of oxygen has a value in the range of 20 mol % to 70 mol %, and wherein in the second region, the amount of oxygen has a minimum point at which the amount of oxygen decreases and then increases, while the amount of silicon and the amount of nitrogen respectively have a maximum point at which each amount increases and then decreases, from the surface side toward the base material side.