| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which can manufacture an SOI wafer excellent in film thickness uniformity of an SOI layer.SOLUTION: An SOI wafer manufacturing method comprises: (a) a process of performing a thermal treatment under an oxidized gas atmosphere to form a thermally-oxidized film on a surface of an SOI layer of an SOI wafer; (b) a process of measuring a film thickness of the SOI layer after forming the thermally-oxidized film; (c) a batch cleaning process of adjusting a film thickness of the SOI layer after etching by batch cleaning to be thicker than a target value by adjusting an etching amount of the SOI layer depending on the film thickness of the SOI layer, which is measured in the process (b); (d) measuring the film thickness of the SOI layer after batch cleaning process; (e) a single sheet cleaning process of adjusting the film thickness of the SOI layer after etching by single sheet cleaning to be the target value by adjusting the etching amount of the SOI layer depending on the film thickness of the SOI layer, which is measured in the process (d); and removing the thermally-oxidized film formed in the process (a) before or after the process (b). |
