发明名称 |
Semiconductor light emitting device and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices. |
申请公布号 |
US9236304(B2) |
申请公布日期 |
2016.01.12 |
申请号 |
US201414150713 |
申请日期 |
2014.01.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Kim Tae Hun;Kim Sung Joon;Lee Su Yeol;Lee Seung Hwan;Jang Tae Sung |
分类号 |
H01L21/00;H01L21/78;H01L33/62;H01L23/00;H01L33/00;H01L33/52;H01L33/60 |
主分类号 |
H01L21/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices, wherein the reflective bump layer is formed by dotting a light reflective material on the bump core in an inkjet scheme and firing the light reflective material dotted on the bump core. |
地址 |
Suwon-Si, Gyeonggi-Do KR |