| 发明名称 | Systems and methods to improve the reliability and lifespan of flash memory | ||
| 摘要 | A method for controlling flash memory includes selecting a new forward error correction (FEC) parameter set that provides more redundancy than a current FEC parameter set. The method also includes coding source information bits, using the new FEC parameter set, during write operations to a first corrupted page in the flash memory. The method further includes mapping the first corrupted page and at least one additional corrupted page in the flash memory to a single logical page with an expected page size. | ||
| 申请公布号 | US9235468(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201313861691 | 申请日期 | 2013.04.12 |
| 申请人 | QUALCOMM Incorporated | 发明人 | Mao Yinian |
| 分类号 | G06F11/10 | 主分类号 | G06F11/10 |
| 代理机构 | Withrow & Terranova, PLLC | 代理人 | Withrow & Terranova, PLLC |
| 主权项 | 1. A method for controlling a flash memory, comprising: selecting a new forward error correction (FEC) parameter set that provides more redundancy than a current FEC parameter set; coding source information bits, using the new FEC parameter set, during write operations to a first corrupted page in the flash memory; and mapping the first corrupted page and at least one additional corrupted page in the flash memory to a single logical page with an expected page size. | ||
| 地址 | San Diego CA US | ||