| 发明名称 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | ||
| 摘要 | A vapor deposition system includes a deposition chamber having a substrate positioned therein. The system includes at least one vessel containing at least one silsesquioxane precursor. The system includes at least one vessel containing at least one wetting agent or surfactant. The system includes at least one vessel containing a carboxylic acid or nitrogen base. The system includes a source for at least one reaction gas. | ||
| 申请公布号 | US9234279(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201414471718 | 申请日期 | 2014.08.28 |
| 申请人 | Micron Technology, Inc. | 发明人 | Marsh Eugene P. |
| 分类号 | H01L21/312;B32B3/26;C23C16/00;B05D3/06;C23C16/448;C23C18/12;H01L21/02;H01L21/316;B05D1/00 | 主分类号 | H01L21/312 |
| 代理机构 | Wells St. John, P.S. | 代理人 | Wells St. John, P.S. |
| 主权项 | 1. A vapor deposition system comprising: a deposition chamber having a substrate positioned therein; at least one vessel comprising at least one silsesquioxane precursor; at least one vessel comprising at least one wetting agent or surfactant; at least one vessel comprising a carboxylic acid or nitrogen base; and a source for at least one reaction gas. | ||
| 地址 | Boise ID US | ||