发明名称 SUBSTRATE TREATING APPARATUS AND METHOD OF TREATING SUBSTRATE
摘要 The present invention is to suppress both a difference between a desired throughput of a substrate and an actual throughput thereof, and a variation between throughputs of parts of the substrate at a low cost. A substrate processing device includes: a rotation keeping part keeping and rotating a substrate; a first supply source supplying first deionized water at a first temperature; a second supply source supplying second deionized water at a second temperature, higher than the first temperature; a wiring system dividing the first deionized water into first deionized water in one direction and first deionized water in the other direction in order to lead the first deionized water; a processing solution supply part supplying a processing solution, mixed with chemical liquid and the first deionized water in one direction, to a central area on an upper surface of the substrate; a first supply part supplying first liquid, mainly including the first deionized water in the other direction, to a central area on a lower surface of the substrate; a second supply part supplying second liquid, mainly including the second deionized water supplied from the second supply source, to respective middle and surrounding areas on the lower surface of the substrate; and a calorie control part independently controlling calories supplied by the first supply part, and calories supplied by the second supply part, in order to change a temperature distribution in a radial direction of the substrate.
申请公布号 KR20160004209(A) 申请公布日期 2016.01.12
申请号 KR20150093385 申请日期 2015.06.30
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 FUJIWARA NAOZUMI;EDO TORU;SAWASHIMA JUN;SHIMOMURA TATSUMI
分类号 H01L21/02;H01L21/67 主分类号 H01L21/02
代理机构 代理人
主权项
地址