SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To maintain high breakdown voltage and reduce on-resistance.SOLUTION: A semiconductor device comprises: an ntype silicon carbide substrate; an n type silicon carbide epitaxial layer; a ptype region 3 which is selectively formed on the surface layer of the n type silicon carbide epitaxial layer; a p base layer formed on the n type silicon carbide epitaxial layer and the ptype region 3; an nsource region which is selectively formed on a surface layer of the p base layer; a pcontact region formed on the p base layer; an n type well region formed so as to penetrate the p base layer from a surface thereof and reach the n type silicon carbide epitaxial layer; a gate electrode provided via a gate insulating film; a source electrode; and a drain electrode. The ptype region 3 is periodically arranged so that the planar shape thereof becomes rectangle and the sides thereof become parallel to the sides of the adjacent ptype region 3. The ptype region 3 is connected to the adjacent ptype region 3 at two facing corners 3a, and the nsource region and the pcontact region are divided into a plurality of cells.