发明名称 |
Semiconductor device and methods of forming fins and gates with ultraviolet curing |
摘要 |
Semiconductor devices and methods for forming devices with ultraviolet curing. One method includes, for instance: obtaining a wafer; forming at least one mandrel; forming spacers adjacent to the at least one mandrel; performing an ultraviolet treatment to at least one set of spacers; and etching to form hard mask regions below at least the spacers. An intermediate semiconductor device includes, for instance: a substrate; a stop layer over the substrate; a first barrier layer over the stop layer; at least one first mandrel and at least one second mandrel on the first barrier layer; at least one first set of spacers positioned adjacent to the first mandrel; at least one second set of spacers positioned adjacent to the second mandrel; and a second barrier layer over the at least one first mandrel and the at least one first set of spacers. |
申请公布号 |
US9236481(B1) |
申请公布日期 |
2016.01.12 |
申请号 |
US201514699543 |
申请日期 |
2015.04.29 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Zang Hui;Liu Jin Ping |
分类号 |
H01L27/088;H01L29/78;H01L29/49;H01L29/06;H01L29/66;H01L21/027;H01L21/311;H01L21/306;H01L21/308;H01L21/3213 |
主分类号 |
H01L27/088 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. |
主权项 |
1. A method comprising:
obtaining a wafer; forming at least one mandrel; forming spacers adjacent to the at least one mandrel; performing an ultraviolet treatment to at least one set of spacers; and etching to form hard mask regions below at least the spacers. |
地址 |
Grand Cayman KY |