发明名称 |
Method for making light emitting diode |
摘要 |
A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. |
申请公布号 |
US9236538(B2) |
申请公布日期 |
2016.01.12 |
申请号 |
US201213729627 |
申请日期 |
2012.12.28 |
申请人 |
Tsinghua University;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
Zhu Jun;Zhang Hao-Su;Zhu Zhen-Dong;Li Qun-Qing;Jin Guo-Fan;Fan Shou-Shan |
分类号 |
H01L33/22;H01L33/58;H01L33/00;H01L33/04;H01L33/44 |
主分类号 |
H01L33/22 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A method for making a light emitting diode, the method comprising:
providing a substrate having an epitaxial growth surface; epitaxially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the epitaxial growth surface of the substrate in that sequence; forming a cermet layer on the second semiconductor layer, wherein the cermet layer is in direct physical contact with the second semiconductor layer; exposing a surface of the first semiconductor layer by removing the substrate to form an exposed surface; applying a first electrode covering the entire exposed surface of the first semiconductor layer; and applying a second electrode electrically connected to the second semiconductor layer. |
地址 |
Beijing CN |