| 发明名称 | Light emitting device and lighting system | ||
| 摘要 | Disclosed are a light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (112), an InxGa1-xN layer (where, 0<x≦1) (151) on the first conductive semiconductor layer (112), a GaN layer (152) on the InxGa1-xN layer (151), a first Aly1Ga1-y1N layer (where, 0<y1≦1) (153) on the GaN layer (152), an active layer (114) on the first Aly1Ga1-y1N layer (153), and a second conductive semiconductor layer (116) on the active layer (114). | ||
| 申请公布号 | US9236531(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201414307539 | 申请日期 | 2014.06.18 |
| 申请人 | LG Innotek Co., Ltd. | 发明人 | Choi Eun Sil;Kim Dong Wook |
| 分类号 | H01L29/06;H01L33/00;H01L21/00;H01L33/32;H01L33/06;H01L33/14 | 主分类号 | H01L29/06 |
| 代理机构 | KED & Associates LLP | 代理人 | KED & Associates LLP |
| 主权项 | 1. A light emitting device comprising: a first conductive semiconductor layer; an InxGa1-xN layer (where, 0<x≦1) on the first conductive semiconductor layer; a GaN layer on the InxGa1-xN layer; a first Aly1Ga1-y1N layer (where, 0<y1≦1) on the GaN layer; an active layer on the first Aly1Ga1-y1N layer; a second conductive semiconductor layer on the active layer; and a second Aly2Ga1-y2N layer (where 0<y2≦1), interposed between between the first Aly1Ga1-y1N layer and the active layer, wherein the second Aly2Ga1-y2N layer has bandgap energy higher than bandgap energy of the first Aly1Ga1-y1N layer. | ||
| 地址 | Seoul KR | ||