Sensor and method for fabricating the same

摘要

A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

主权项

1. A sensor, comprising: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein:
the TFT device comprises: a gate electrode disposed on the base substrate and connected with a gate line; a gate insulating layer disposed on the gate electrode and overlaying the base substrate; a source electrode and a drain electrode disposed on the gate insulating layer and opposed to each other to form a groove, wherein the drain electrode is connected with a data line; an ohmic layer disposed on the source electrode and the drain electrode; and an active layer disposed on the ohmic layer and in the groove; the photodiode sensing device comprises: a receiving electrode disposed on the gate insulating layer and connected with the source electrode; a photodiode disposed on the receiving electrode; a transparent electrode disposed on the photodiode; and a bias line disposed over the transparent electrode and connected with the transparent electrode, wherein the photodiode is a PIN photodiode comprising: an N-type semiconductor, a first part of an I-type semiconductor, a second part of the I-type semiconductor and a P-type semiconductor, the N-type semiconductor is positioned on the receiving electrode and is in the same pattern layer as the ohmic layer, and the first part of the I-type semiconductor is positioned on the N-type semiconductor and is in the same pattern layer as the active layer.