Patterning of silicon oxide layers using pulsed laser ablation

摘要

A method for making an ablated electrically insulating layer on a semiconductor substrate. A first relatively thin layer of at least an undoped glass or undoped oxide is deposited on a surface of a semiconductor substrate having n-type doping. A first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor is deposited on the relatively thin layer of at least an undoped glass or undoped oxide. At least a layer of borosilicate glass or borosilicate/undoped glass stack is deposited on the relatively thin semiconductor layer. The at least borosilicate glass or borosilicate/undoped glass stack is selectively ablated with a pulsed laser, and the relatively thin semiconductor layer substantially protects the semiconductor substrate from the pulsed laser.

主权项

1. A method for making an ablated electrically insulating layer on a semiconductor substrate, said method comprising:
depositing a first relatively thin layer of at least an undoped glass or undoped oxide on a surface of a semiconductor substrate having n-type doping; depositing a first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor on said relatively thin layer of at least an undoped glass or undoped oxide; depositing at least a layer of borosilicate glass or borosilicate/undoped glass stack on said relatively thin semiconductor layer; and selectively ablating said layer of at least borosilicate glass or borosilicate/undoped glass stack with a pulsed laser, said relatively thin semiconductor layer substantially protecting said semiconductor substrate from said pulsed laser.