发明名称 Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same
摘要 There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.
申请公布号 US9236495(B2) 申请公布日期 2016.01.12
申请号 US201213729539 申请日期 2012.12.28
申请人 LG Display Co., Ltd. 发明人 Seo HyunSik;Kim MoonGoo;Kim BongChul;Lee JeongHoon;Ryoo Changll
分类号 H01L29/786;H01L29/66;H01L29/423 主分类号 H01L29/786
代理机构 Fenwick & West LLP 代理人 Fenwick & West LLP
主权项 1. An organic light emitting diode display device comprising: a lower substrate on which a non-pixel region and a light emitting region are defined; a thin film transistor (TFT) formed in the non-pixel region of the lower substrate and including a gate electrode,a gate insulating layer formed on the entire surface of the lower substrate including the gate electrode,an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode, the active layer pattern formed of an oxide semiconductor,an etch stop layer pattern formed on the active layer pattern and the gate insulating layer,a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern; a passivation layer formed on the entire surface of the lower substrate including the TFT; a plurality of color filter layers formed on the passivation layer of the light emitting region of the lower substrate; a dummy color filter layer pattern formed on the passivation layer of the non-pixel region of the lower substrate; an organic insulating layer formed on the entire surface of the lower substrate including the color filter layers and the dummy color filter layer pattern; drain electrode contact holes formed on the organic insulating layer, the dummy color filter layer pattern, and the passivation layer, and exposing the drain electrode of the TFT; a first electrode formed on the organic insulating layer and electrically connected to the drain electrode through the drain electrode contact hole; a bank layer formed on the organic insulating layer of the non-pixel region of the lower substrate; an organic light emitting layer formed on the entire surface of the lower substrate including the first electrode; and an upper substrate attached to an upper portion of the organic light emitting layer and having a second electrode formed thereon.
地址 Seoul KR