Substrate processing apparatus and a method of manufacturing a semiconductor device

摘要

The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate.;The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.

主权项

1. A substrate processing apparatus comprising:
a process chamber; a processor; a controllable susceptor lifting mechanism configured to receive a control signal from the processor to raise and lower a susceptor with respect to a bottom surface of the process chamber; the susceptor disposed on the controllable susceptor lifting mechanism and having through holes formed therein; a pin fixed to the process chamber, the pin being aligned with at least one of the through holes formed in the susceptor; a controllable heating lamp provided in the upper part of the process chamber and configured to receive a control signal from the processor to activate the controllable heating lamp; a controllable heater integrally buried inside the susceptor and configured to receive a control signal from the processor to activate the controllable heater; a controllable gas supply unit coupled to the process chamber and configured to receive a control signal from the processor to open and close valves of the controllable gas supply unit to supply gas to the process chamber; a controllable gas exhaustion unit coupled to the process chamber and configured to receive a control signal from the processor to operate a pump of the controllable gas exhaustion unit to remove gas from the process chamber, wherein the processor is configured to:
issue first control signals to the controllable susceptor lifting mechanism, the controllable heating lamp, the controllable heater and the controllable gas supply unit to lower the susceptor a predetermined distance toward the bottom surface of the process chamber, activate the controllable heating lamp and the controllable heater and open the valves of the controllable gas supply unit while a substrate is supported on the pin, andafter a predetermined time, issue second control signals to the controllable susceptor lifting mechanism, the controllable heating lamp, the controllable heater and the controllable gas supply unit to raise the susceptor a predetermined distance toward the top surface of the process chamber, transfer the substrate supported on the pin to the susceptor and open the valves of the controllable gas supply unit to supply processing gas while the substrate is heated by the controllable heater by activating the controllable heating lamp.