ZrA1ON films

摘要

Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric, and a tunnel gate insulator in flash memories.

主权项

1. A method comprising:
forming a dielectric layer on a substrate including forming at least a portion of the dielectric layer by:
forming at least one aluminum oxide layer and at least one zirconium nitride layer by a monolayer by monolayer sequencing procedure; andconverting the at least one aluminum oxide layer and at least one zirconium nitride layer to ZrAAlBOXNY by annealing; andforming an electrically conductive layer on the dielectric layer.