| 发明名称 | Lithography model for 3D resist profile simulations | ||
| 摘要 | Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference. | ||
| 申请公布号 | US9235662(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201313757472 | 申请日期 | 2013.02.01 |
| 申请人 | ASML NETHERLANDS B.V. | 发明人 | Liu Peng |
| 分类号 | G06F17/50;G03F7/20 | 主分类号 | G06F17/50 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: determining, using a computer system, an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; determining, using the computer system, an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and determining, using the computer system, the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference. | ||
| 地址 | Veldhoven NL | ||