| 摘要 |
FIELD: instrument engineering.SUBSTANCE: in the method of manufacturing deep profiled silicon structures on the silicon wafer a protective layer is created, a contrasting layer is created of a material different from the material of the protective layer, the structure of a given profile is formed by successive operations of photolithography and etching until occurrence of silicon in the region of the maximum depth of the structure, by the subsequent alternation of etching silicon and the remaining protective layer the predetermined profile is obtained in silicon. Opening of silicon in the region of maximum depth of the structure is carried out after creation of the protective layer, and then the contrast layer is applied on the protective layer and on the opened portion of the silicon, and the structure formation of the predetermined profile is carried out.EFFECT: improved accuracy of manufacturing deep profiled silicon structures.10 dwg |
