Source-Collector modules for EUV lithography employing a GIC mirror and a LPP source.

摘要

Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.