发明名称 LIQUID CRYSTAL DISPLAY DEVICE
摘要 The invention provides a high-precision display device having a reliable top- and single-gate TFT causing less current leakage.;Part of a gate line 10 that crosses a semiconductor layer 103 acts as a gate electrode to form a TFT. The semiconductor layer 103 is connected to a data line 20 via a through-hole 140 on one side of the TFT and also connected to a contact electrode 107 via a through-hole 120 on the other side of the TFT. A floating electrode 30 is formed between the TFT and the through-hole 140 or between the TFT and the through-hole 120. The floating electrode 30 is formed on a layer above the semiconductor layer 103 with the use of the same material and at the same time as the gate electrode.
申请公布号 US2016005769(A1) 申请公布日期 2016.01.07
申请号 US201514789340 申请日期 2015.07.01
申请人 Japan Display Inc. 发明人 URAMOTO Seiichi
分类号 H01L27/12;G02F1/1362;G02F1/1368;H01L29/41;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A liquid crystal display device comprising: a TFT substrate including: a plurality of gate lines extending in a first direction and arranged in a second direction;a plurality of data lines extending in the second direction and arranged in the first direction; anda plurality of pixel electrodes formed in the areas surrounded by the plurality of gate lines and the plurality of data lines; a counter substrate; and a liquid crystal layer sandwiched between the TFT substrate and the counter substrate, wherein a semiconductor layer and a gate electrode form a TFT with a gate insulating film placed therebetween, wherein the semiconductor layer is connected to one of the plurality of data lines on one side of the TFT and also connected to a contact electrode via a through-hole on the other side of the TFT, wherein the contact electrode is connected to one of the plurality of pixel electrode, and wherein a floating electrode is formed between the gate electrode and the through-hole on a layer above the semiconductor layer, the floating electrode being fabricated with the same material and at the same time as the gate electrode.
地址 Tokyo JP