Semiconductor Constructions

摘要

Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

主权项

1. A construction, comprising:
conductive structures spaced from one another by intervening regions; insulative structures within the intervening regions, the insulative structures comprising dielectric spacers along sidewalls of the conductive structures, and comprising air gaps between the dielectric spacers; and the insulative structures comprising dielectric capping material over the air gaps; the dielectric capping material being between the dielectric spacers and not over upper surfaces of the dielectric spacers; the dielectric capping material comprising a different composition than the dielectric spacers.