发明名称 |
METHOD FOR MEASURING RECOMBINATION LIFETIME OF SILICON SUBSTRATE |
摘要 |
Provided is a method of measuring a recombination lifetime of a silicon substrate, which is capable of evaluating metal contamination and crystal defects in a silicon substrate manufacturing process and a device manufacturing process with high accuracy. The method includes: measuring a recombination lifetime of a silicon substrate after subjecting a surface of the silicon substrate to chemical passivation processing; and performing ultraviolet protection processing of protecting at least the silicon substrate from ultraviolet rays during a period from the chemical passivation processing to a time when the measurement of the recombination lifetime is completed. |
申请公布号 |
US2016005664(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201314764856 |
申请日期 |
2013.12.27 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
Takeno Hiroshi |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of measuring a recombination lifetime of a silicon substrate, the method comprising:
measuring a recombination lifetime of a silicon substrate after subjecting a surface of the silicon substrate to chemical passivation processing; and performing ultraviolet protection processing of protecting at least the silicon substrate from ultraviolet rays during a period from the chemical passivation processing to a time when the measurement of the recombination lifetime is completed. |
地址 |
Tokyo JP |